5 SIMPLE STATEMENTS ABOUT GERMANIUM EXPLAINED

≤ 0.fifteen) is epitaxially developed with a SOI substrate. A thinner layer of Si is developed on this SiGe layer, then the construction is cycled as a result of oxidizing and annealing phases. Due to preferential oxidation of Si about Ge [sixty eight], the initial Si1–Value. Apparently, the group observed that growing the Si cap thickness furt